Datasheet > SI4108DY

SI4108DY

更新时间： 2024-09-23 11:57:31

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威世 - VISHAY		/
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描述
N-Channel 75-V (D-S) MOSFET

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SI4108DY 数据手册

New Product

Si4108DY

Vishay Siliconix

N-Channel 75-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

TrenchFET^®Power MOSFET

100 % R_gTested

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

RoHS

0.0098 at V_GS= 10 V

36 nC

20.5

COMPLIANT

100 % UIS Tested

APPLICATIONS

•

Primary Side Switch

Half Bridge

Intermediate Bus Converter

SO-8

Top View

N-Channel MOSFET

Ordering Information: Si4108DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

20.5

16.4

13.8^{b, c}

11.1^{b, c}

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

6.5

3^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

L = 0.1 mH

_C= 25 °C

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

51.2

7.8

3.6^{b, c}

2.3^{b, c}

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

- 55 to 150

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 80 °C/W.

Document Number: 68635

S-81195-Rev. A, 26-May-08

www.vishay.com

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