Si4090BDY
Vishay Siliconix
www.vishay.com
N-Channel 100 V (D-S) MOSFET
FEATURES
SO-8 Single
D
5
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
D
6
D
7
D
8
for definitions of compliance please see
www.vishay.com/doc?99912
4
G
APPLICATIONS
3
S
D
2
• DC/DC primary side switch
• Telecom / server
S
Top View
• Motor drive control
PRODUCT SUMMARY
VDS (V)
• Synchronous rectification
G
100
R
R
R
DS(on) max. (Ω) at VGS = 10 V
DS(on) max. (Ω) at VGS = 7.5 V
DS(on) max. (Ω) at VGS = 6 V
0.0100
0.0106
0.0113
28
S
Qg typ. (nC)
D (A) a
N-Channel MOSFET
I
18.7
Configuration
Single
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and halogen-free
SI4090BDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
100
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
C = 70 °C
18.7
T
15
Continuous drain current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
12.2 b, c
9.8 b, c
80
A
Pulsed drain current (t = 300 μs)
IDM
IS
TC = 25 °C
6.7
2.8 b, c
Continuous source-drain diode current
TA = 25 °C
Single pulse avalanche current
Avalanche energy
IAS
35
L = 0.1 mH
EAS
61.25
7.4
mJ
W
T
C = 25 °C
C = 70 °C
T
4.7
Maximum power dissipation
PD
TA = 25 °C
TA = 70 °C
3.1 b, c
2.0 b, c
-55 to +150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b, d
t ≤ 10 s
RthJA
RthJF
33
15
40
17
°C/W
Maximum junction-to-foot (drain)
Steady state
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 90 °C/W
S21-0072-Rev. A, 08-Feb-2021
Document Number: 63035
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000