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SHD418302B

更新时间： 2024-11-28 21:12:59
品牌 Logo 应用领域
SENSITRON 晶体管
页数 文件大小 规格书
3页 228K
描述
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 2 Pin, HERMETIC SEALED, CERAMIC, SHD-5B, 2 PIN

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SHD418302B 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：HERMETIC SEALED, CERAMIC, SHD-5B, 2 PIN
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.82外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：80 V
配置：DARLINGTON最小直流电流增益 (hFE)：100
JESD-30 代码：R-CSSO-G2元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

SHD418302B 数据手册

 浏览型号SHD418302B的Datasheet PDF文件第2页浏览型号SHD418302B的Datasheet PDF文件第3页 
SHD418302  
SHD418302A  
SHD418302B  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4024, REV.-  
Formerly part number SHD4182/A/B  
NPN BI-POLAR DARLINGTON POWER TRANSISTOR  
•
•
•
Hermetic, Ceramic Package  
Electrically equivalent to 2N6301  
Surface Mount Package  
Absolute Maximum Ratings*  
Symbol  
TA = 25°C unless otherwise noted  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
80  
80  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current – Continuous  
Base Current  
8.0  
A
IB  
0.12  
A
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
TA = 25°C unless otherwise noted  
Characteristic  
Max  
Units  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
22  
0.17  
5.8  
W
W/°C  
°C/W  
RθJC  
Electrical Characteristics  
Symbol Parameter  
TA = 25°C unless otherwise noted  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
VCEO  
IEBO  
ICEX  
Collector-Emitter Sustain Voltage  
IC = 100 mA, IB = 0  
VEB = 5.0 Vdc  
VCE = 80Vdc, VBE(OFF)  
1.5Vdc  
80  
-
-
-
V
mA  
µA  
Emitter-Base Cut-off Current  
Collector Cutoff Current  
2.0  
500  
=
=
VCE = 80Vdc, VBE(OFF)  
5.0  
0.5  
mA  
mA  
1.5Vdc, TC = 150°C  
VCE = 40Vdc, IB = 0  
ICEO  
Emitter-Base Breakdown Voltage  
-
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•  
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •  
123

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