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SHD418309

更新时间： 2024-11-28 20:05:23
品牌 Logo 应用领域
SENSITRON 晶体管
页数 文件大小 规格书
4页 115K
描述
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SHD-5, 3 PIN

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SHD418309 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：HERMETIC SEALED, CERAMIC, SHD-5, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.82外壳连接：COLLECTOR
最大集电极电流 (IC)：10 A集电极-发射极最大电压：140 V
配置：SINGLE最小直流电流增益 (hFE)：7.5
JESD-30 代码：R-CXSO-N3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：NO LEAD
端子位置：UNSPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICON标称过渡频率 (fT)：0.08 MHz
Base Number Matches：1

SHD418309 数据手册

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SHD418309  
SHD418309A  
SHD418309B  
SENSITRON  
SEMICONDUCTOR  
PRELIMINARY DATA SHEET  
DATA SHEET 4023, REV.-  
NPN BI-POLAR POWER TRANSISTOR  
ƒ
ƒ
ƒ
Hermetic, Ceramic Package  
Electrically equivalent to 2N3442  
Surface Mount Package  
Absolute Maximum Ratings*  
Symbol  
TA = 25°C unless otherwise noted  
Parameter  
Value  
140  
Units  
VCEO  
VCBO  
VEBO  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
V
V
160  
7.0  
Collector Current – Continuous  
– Peak  
10.0  
15.0  
IC  
A
IB  
Base Current  
7.0  
A
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
TA = 25°C unless otherwise noted  
Characteristic  
Max  
Units  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
22  
0.17  
5.8  
W
W/°C  
°C/W  
PD  
RθJC  
Electrical Characteristics  
Symbol Parameter  
TA = 25°C unless otherwise noted  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
VCEO  
IEBO  
ICEX  
Collector-Emitter Sustain Voltage  
IC = 200 mA, IB = 0  
VEB = 7Vdc  
VCE = 80Vdc, VBE(OFF)  
1.5Vdc  
140  
-
-
-
5
5
V
mA  
mA  
Emitter-Base Cut-off Current  
Collector Cutoff Current  
=
ICEO  
Emitter-Base Breakdown Voltage  
VCE = 140Vdc, IB = 0  
-
200  
mA  
ON CHARACTERISTICS*  
hfe  
DC Current Gain  
IC = 3A, VCE = 4Vdc  
IC = 10A, VCE = 4Vdc  
IC = 10Adc, IB = 2Adc  
20  
7.5  
-
70  
-
5.0  
-
V
VCE(sat)  
VBE  
Collector-Emitter Saturation  
Voltage  
Base-Emitter Voltage  
IC = 10A, VCE = 4Vdc  
-
5.7  
V
DYNAMIC CHARACTERISTICS  
fT  
Current Gain – Bandwidth Product IC = 2A, VCE = 4Vdc,  
f = 40 KHz  
80  
12  
-
KHz  
-
hfe  
Small-Signal Current Gain  
IC = 2Adc, VCE = 14Vdc,  
f = 1.0 kHz  
72  
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%  
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•  
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •  
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SHD418309B SENSITRON

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SHD4184A SENSITRON

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