Datasheet > SHD217302A_09

SHD217302A_09

更新时间： 2024-09-15 09:26:43

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
2页	33K
描述
HERMETIC POWER MOSFET N-CHANNEL

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数据手册

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SHD217302A_09 数据手册

SENSITRON

SEMICONDUCTOR

SHD217302A

TECHNICAL DATA

DATA SHEET 317, REV -

HERMETIC POWER MOSFET

N-CHANNEL

FEATURES:

•

100 Volt, 0.16 Ohm, 14A MOSFET

Fast Switching

Low R_{DS (on)}

Equivalent to IRF130 Series

MAXIMUM RATINGS

ALL RATINGS ARE AT T_C= 25°C UNLESS OTHERWISE SPECIFIED.

RATING

GATE TO SOURCE VOLTAGE

SYMBOL

V_GS

MIN.

-55

TYP.

MAX.

±20

+150

UNITS

Volts

Amps

°C

I_D

ON-STATE DRAIN CURRENT

OPERATING AND STORAGE TEMPERATURE

@ T_C= 100°C

T_OP/T_STG

P_D

R_thJC

Watts

TOTAL DEVICE DISSIPATION @ T_C= 25°C

THERMAL RESISTANCE, JUNCTION TO CASE

1.3

°C/W

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

BV_DSS

V_DS(ON)

R_DS(ON)

100

Volts

V_GS= 0V, I_D= 1.0mA

DRAIN TO SOURCE ON-STATE VOLTAGE

100

0.16

V_GS= 10V, I_D= 10A

STATIC DRAIN TO SOURCE ON STATE RESISTANCE

_GS= 10V, I_D= 20A

GATE THRESHOLD VOLTAGE V_DS= V_GS, I_D= 250μA

FORWARD TRANSCONDUCTANCE

V_DS≥ I_{D (ON)}X, R_{DS (ON)}Max., I_DS= 0.6 X I_D

ZERO GATE VOLTAGE DRAIN CURRENT

0.14

V_GS(th)

g_fs

2.0

4.6

2.8

7.0

4.0

Volts

S(1/Ω)

V_DS= Max. Rating, V_GS= 0V

I_DSS

I_GSS

250

1000

100

-100

2.5

μA

V_DS= 0.8xMax. Rating, V_GS= 0V, T_J= 125°C

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

TURN ON DELAY TIME

RISE TIME

V_GS= 20V

_GS= -20V

V_DD= 50V,

I_D= 7.0A,

R_G= 12Ω,

t_d(ON)

9.5

t_r

t_d(OFF)

t_f

nsec

Volts

nsec

TURN OFF DELAY TIME

FALL TIME

DIODE FORWARD VOLTAGE

_GS= 10V

T_C= 25°C, I_S= 14A,

_GS= 0V

V_SD

1.0

t_rr

250

REVERSE RECOVERY TIME

T_J= 25°C,

I_f= 14A,

di_F/ds = 100A/μsec,

V_GS= 0 V

INPUT CAPACITANCE

C_iss

C_oss

C_rss

650

240

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

V_DS= 25 V

f = 1.0MHz

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