SFF6661/39
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
0.86 AMP
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
N-CHANNEL MOSFET
90 Volts, 4Ω
SFF6661
/39 ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
└
└
Features:
Rugged construction
Low RDS(on) and high transconductance
Fast recovery and superior dv/dt performance
Increased reverse energy capability
Low input and transfer capacitance for easy
paralleling
Package
/39 = TO-39
Hermetically sealed package
Very fast switching speed
TX, TXV, S-Level screening available2/
Replacement for 2N6661
Maximum Ratings3/
Symbol
VDS
Value
90
Units
Drain - Source Voltage
Gate - Source Voltage
V
V
VGS
±20
Max. Continuous Drain Current
(TJ = 150°C)
TC = 25°C
TC = 100°C
0.86
0.54
ID
IDM
A
A
Max. Instantaneous Drain Current (Tj limited)
3
TC = 25°C
TA = 25°C
6.25
0.725
Total Power Dissipation
W
°C
PD
Operating & Storage Temperature
-65 to +150
TOP & TSTG
Maximum Thermal Resistance
(Junction to Ambient)
(Junction to Case)
RθJA
RθJC
170
20
°C /W
NOTES:
TO-39
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0041B
DOC