SFF60P05MTX

更新时间： 2024-09-25 13:13:23

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
3页	83K
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数据手册

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SFF60P05MTX 数据手册

SFF60P05M

SFF60P05Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4470 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

-60 AMP/-50 Volts

25 m typical

P-Channel

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

SFF60P05

__ __ __

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

POWER MOSFET

│

└

│

└

Features:



Rugged Construction with Poly Silicon Gate

Low RDS(on) and High Transconductance

Excellent High Temperature Stability

Very Fast Switching Speed

Fast Recovery and Superior dv/dt Performance

Increased Reverse Energy Capability

Low Input and Transfer Capacitance for Easy

Paralleling

Lead Option

__ = Straight Leads

DB = Down Bend

UB = Up Bend

Package ^3/

M = TO-254

Z = TO-254Z



Hermetically Sealed

TX, TXV, and Space Level Screening Available.

Consult Factory.

Maximum Ratings^4/

Symbol

V_DS

Value

-50

Units

Drain - Source Voltage

Gate – Source Voltage

V_GS

+20

Continuous Drain Current

Operating & Storage Temperature

Thermal Resistance, Junction to Case

Total Device Power Dissipation

I_D

-60

-55 to +150

0.8

ºC

_OP& T_STG

ºC/W

R_

T_C= 25ºC

T_C= -55ºC

156

118

Watts

P_D

NOTES:

TO-254 (M)

TO-254Z (Z)

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Maximum current limited by package configuration.

4/ Unless otherwise specified, all electrical characteristics @25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FP0045E

DOC

12 3

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