Datasheet > SEMIX503GB126HDS_09

SEMIX503GB126HDS_09

更新时间： 2024-02-07 05:57:26

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	378K
描述
Trench IGBT Modules

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数据手册

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SEMIX503GB126HDS_09 数据手册

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SEMiX503GB126HDs

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

466

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 150 °C

327

I_Cnom

I_CRM

V_GES

300

I_CRM= 2xI_Cnom

600

-20 ... 20

SEMiX^®3s

V_CC= 600 V

V_GE≤ 20 V

V_CES≤ 1200 V

T_j= 125 °C

t_psc

µs

°C

T_j

-40 ... 150

Trench IGBT Modules

SEMiX503GB126HDs

Features

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

431

298

T_j= 150 °C

I_Fnom

I_FRM

I_FSM

T_j

300

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

600

2000

• Homogeneous Si

-40 ... 150

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

Module

I_t(RMS)

T_stg

600

-40 ... 125

4000

°C

V_isol

AC sinus 50Hz, t = 1 min

Typical Applications*

• AC inverter drives

• UPS

• Electronic Welding

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Remarks

• Case temperatur limited to T_C=125°C

max.

I_C= 300 A

V_CE(sat)

T_j= 25 °C

1.7

2.1

_GE= 15 V

T_j= 125 °C

2.45

chiplevel

• Not for new design

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

V_CE0

r_CE

1.2

1.1

3.0

4.5

6.5

0.3

0.9

2.3

3.7

5.8

0.1

mΩ

V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 12 mA

T_j= 25 °C

Ω

V_GE= 0 V

_CE= 1200 V

T_j= 125 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

21.6

1.13

0.98

2400

2.50

275

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

t_d(on)

t_r

T_j= 125 °C

V_CC= 600 V

I_C= 300 A

E_on

t_d(off)

t_f

R_{G on}= 2.2 Ω

625

125

_{G off}= 2.2 Ω

E_off

R_th(j-c)

K/W

per IGBT

0.08

Rev. 16 – 16.12.2009

12 3 4 5 6

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