5秒后页面跳转
SEMiX526D22p PDF预览

SEMiX526D22p

更新时间: 2023-12-06 20:03:15
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON /
页数 文件大小 规格书
5页 674K
描述
Bridge Rectifier Modules SEMiX 6p (122x62x17)

SEMiX526D22p 数据手册

 浏览型号SEMiX526D22p的Datasheet PDF文件第2页浏览型号SEMiX526D22p的Datasheet PDF文件第3页浏览型号SEMiX526D22p的Datasheet PDF文件第4页浏览型号SEMiX526D22p的Datasheet PDF文件第5页 
SEMiX526D22p  
Absolute Maximum Ratings  
Symbol Conditions  
Module  
Values  
Unit  
It(RMS)  
Tstg  
Visol  
per power terminal (50 A / pin)  
650  
-40 ... 125  
4000  
A
°C  
V
AC sinus 50Hz, t = 1 min  
Absolute Maximum Ratings  
Symbol Conditions  
Diode  
Values  
Unit  
SEMiX® 6p  
3-Phase Bridge Rectifier  
SEMiX526D22p  
Tc = 85 °C  
Tc = 100 °C  
Tj = 25 °C  
Tj = 130 °C  
Tj = 25 °C  
Tj = 130 °C  
IFAV  
IFSM  
i2t  
384  
318  
5400  
A
A
A
Tj = 150 °C  
sin 180°  
10 ms  
sin 180°  
5300  
A
145800  
140450  
2300  
2200  
-40 ... 150  
A²s  
A²s  
V
V
°C  
10 ms  
sin 180°  
VRSM  
VRRM  
Tj  
Features*  
• Terminal height 17 mm  
• Chips soldered directly to insulated  
substrate  
Characteristics  
Symbol Conditions  
Diode  
• UL recognized file no. E63532  
• Press-Fit pins  
min.  
typ.  
max.  
Unit  
• NEW SKR PEP diode-technology for  
enhanced power and environmental  
robustness  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
VF  
1.00  
0.91  
1.12  
1.09  
0.90  
1.10  
1.01  
1.28  
1.25  
0.97  
V
V
V
V
V
IF = 302 A  
chiplevel  
• Tjmax = 150°C  
• NTC temperature sensor  
VF  
IF = 302 A  
terminal level  
chiplevel  
Remarks  
VF0  
Approximation for:  
• Temperature sensor: no basic  
insulation to main circuit, signal  
processing with reference to negative  
DC potential  
IF1 = 302 A  
F2 = 906 A  
Tj = 125 °C  
0.78  
0.83  
V
I
Tj = 25 °C  
Tj = 125 °C  
rF  
0.33  
0.43  
0.45  
0.58  
9
0.1  
0.122  
0.128  
mΩ  
mΩ  
mA  
K/W  
K/W  
K/W  
K/W  
chiplevel  
• Product reliability results valid for Tj ≤  
130°C (recommended Tjop= -40 ...  
130°C)  
• All positive DC terminals have to be  
connected externally to same potential  
Tj = 150 °C, VRRM  
per diode, cont.  
per diode, sin. 180°  
per diode, rec. 120°  
IR  
Rth(j-c)  
Rth(j-c)  
Rth(j-c)  
Rth(c-s)  
per diode (λgrease=0.81 W/(m*K))  
0.042  
Characteristics  
Symbol Conditions  
Module  
min.  
typ.  
max.  
Unit  
T
T
C = 25 °C  
C = 125 °C  
RCC'+EE'  
0.4  
0.6  
mΩ  
mΩ  
measured per  
switch  
calculated without thermal coupling  
(λgrease=0.81 W/(m*K))  
including thermal coupling,  
Ts underneath module (λgrease=0.81 W/  
(m*K))  
Rth(c-s)1  
Rth(c-s)2  
0.007  
K/W  
0.011  
K/W  
Ms  
w
to heat sink (M5)  
3
6
Nm  
g
300  
D
© by SEMIKRON  
Rev. 1.0 – 28.11.2019  
1

与SEMiX526D22p相关器件

型号 品牌 获取价格 描述 数据表
SEMIX553GAL128D SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GAL128DS SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GAL128DS_09 SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GAR128D SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GAR128DS SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GAR128DS_09 SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GB128D SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GB128D_07 SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GB128DS SEMIKRON

获取价格

SPT IGBT Modules
SEMIX553GB128DS_06 SEMIKRON

获取价格

SPT IGBT Modules