SEMiX526D22p
Absolute Maximum Ratings
Symbol Conditions
Module
Values
Unit
It(RMS)
Tstg
Visol
per power terminal (50 A / pin)
650
-40 ... 125
4000
A
°C
V
AC sinus 50Hz, t = 1 min
Absolute Maximum Ratings
Symbol Conditions
Diode
Values
Unit
SEMiX® 6p
3-Phase Bridge Rectifier
SEMiX526D22p
Tc = 85 °C
Tc = 100 °C
Tj = 25 °C
Tj = 130 °C
Tj = 25 °C
Tj = 130 °C
IFAV
IFSM
i2t
384
318
5400
A
A
A
Tj = 150 °C
sin 180°
10 ms
sin 180°
5300
A
145800
140450
2300
2200
-40 ... 150
A²s
A²s
V
V
°C
10 ms
sin 180°
VRSM
VRRM
Tj
Features*
• Terminal height 17 mm
• Chips soldered directly to insulated
substrate
Characteristics
Symbol Conditions
Diode
• UL recognized file no. E63532
• Press-Fit pins
min.
typ.
max.
Unit
• NEW SKR PEP diode-technology for
enhanced power and environmental
robustness
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
VF
1.00
0.91
1.12
1.09
0.90
1.10
1.01
1.28
1.25
0.97
V
V
V
V
V
IF = 302 A
chiplevel
• Tjmax = 150°C
• NTC temperature sensor
VF
IF = 302 A
terminal level
chiplevel
Remarks
VF0
Approximation for:
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to negative
DC potential
IF1 = 302 A
F2 = 906 A
Tj = 125 °C
0.78
0.83
V
I
Tj = 25 °C
Tj = 125 °C
rF
0.33
0.43
0.45
0.58
9
0.1
0.122
0.128
mΩ
mΩ
mA
K/W
K/W
K/W
K/W
chiplevel
• Product reliability results valid for Tj ≤
130°C (recommended Tjop= -40 ...
130°C)
• All positive DC terminals have to be
connected externally to same potential
Tj = 150 °C, VRRM
per diode, cont.
per diode, sin. 180°
per diode, rec. 120°
IR
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
0.042
Characteristics
Symbol Conditions
Module
min.
typ.
max.
Unit
T
T
C = 25 °C
C = 125 °C
RCC'+EE'
0.4
0.6
mΩ
mΩ
measured per
switch
calculated without thermal coupling
(λgrease=0.81 W/(m*K))
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
Rth(c-s)1
Rth(c-s)2
0.007
K/W
0.011
K/W
Ms
w
to heat sink (M5)
3
6
Nm
g
300
D
© by SEMIKRON
Rev. 1.0 – 28.11.2019
1