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SCH1412 PDF预览

SCH1412

更新时间： 2024-11-09 20:56:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 36K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.4A I(D),LLCC

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SCH1412 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.76配置：Single
最大漏极电流 (Abs) (ID)：1.4 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.8 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

SCH1412 数据手册

 浏览型号SCH1412的Datasheet PDF文件第2页浏览型号SCH1412的Datasheet PDF文件第3页浏览型号SCH1412的Datasheet PDF文件第4页 
Ordering number : ENN7715  
N-Channel Silicon MOSFET  
SCH1412  
General-Purpose Switching Device Applications  
Features  
• Low ON-resistance.  
• Ultrahigh-speed switching.  
• 4V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
±20  
1.4  
5.6  
0.8  
150  
DSS  
GSS  
V
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
A
DP  
P
Mounted on a ceramic board (900mm2✕0.8mm)  
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
30  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=30V, V =0  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±16V, V =0  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
1.2  
2.6  
D
Forward Transfer Admittance  
yfs  
=10V, I =700mA  
0.66  
1.1  
230  
400  
65  
S
D
R
(on)1  
I
I
=700mA, V =10V  
GS  
300  
560  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
DS  
D
Static Drain-to-Source On-State Resistance  
R
(on)2  
=400mA, V =4V  
GS  
DS  
D
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=10V, f=1MHz  
=10V, f=1MHz  
=10V, f=1MHz  
DS  
DS  
DS  
Coss  
Crss  
14  
8
t (on)  
d
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
5.0  
4.0  
11  
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
3.0  
Marking : KM  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
53104 TS IM TA-100782 No.7715-1/4  
1234

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