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SCH1345-TL-H PDF预览

SCH1345-TL-H

更新时间: 2024-11-08 01:17:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 546K
描述
Single P-Channel Power MOSFET

SCH1345-TL-H 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:,针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.73
配置:Single最大漏极电流 (Abs) (ID):4.5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e6
湿度敏感等级:1最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)Base Number Matches:1

SCH1345-TL-H 数据手册

 浏览型号SCH1345-TL-H的Datasheet PDF文件第2页浏览型号SCH1345-TL-H的Datasheet PDF文件第3页浏览型号SCH1345-TL-H的Datasheet PDF文件第4页浏览型号SCH1345-TL-H的Datasheet PDF文件第5页 
SCH1345  
Power MOSFET  
–20V, 49m, –4.5A, Single P-Channel  
This low-profile high-power MOSFET is produced using ON  
Semiconductor’s trench technology, which is specifically designed to  
minimize gate charge and ultra low on resistance. This device is suitable for  
applications with low gate charge driving or ultra low on resistance  
requirements.  
www.onsemi.com  
Features  
Low On-Resistance  
1.5V drive  
ESD Diode-Protected Gate  
Pb-Free, Halogen Free and RoHS compliance  
V
R
(on) Max  
I
D Max  
DSS  
DS  
49m@ 4.5V  
64m@ 2.5V  
85m@ 1.8V  
120m@ 1.5V  
20V  
4.5A  
Typical Applications  
Load Switch  
LCD Drive Switch  
ELECTRICAL CONNECTION  
P-Channel  
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)  
1, 2, 5, 6  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Value  
Unit  
V
V
V
20  
10  
DSS  
GSS  
1 : Drain  
2 : Drain  
3 : Gate  
4 : Source  
5 : Drain  
6 : Drain  
V
3
I
4.5  
A
D
Drain Current (Pulse)  
I
18  
A
DP  
PW 10μs, duty cycle 1%  
4
Power Dissipation  
When mounted on ceramic substrate  
(900mm2  
× 0.8mm)  
P
1
W
D
Junction Temperature  
Tj  
150  
°C  
°C  
PACKING TYPE : TL  
MARKING  
Storage Temperature  
Tstg  
55 to +150  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
YW  
TL  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction to Ambient  
When mounted on ceramic substrate  
(900mm2  
0.8mm)  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
R
θJA  
125  
°C/W  
×
© Semiconductor Components Industries, LLC, 2015  
November 2015 - Rev. 2  
1
Publication Order Number :  
SCH1345/D  

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