Datasheet > SCH1406

SCH1406

更新时间： 2024-11-25 19:42:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	93K
描述
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.7A I(D),LLCC

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中文翻译

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技术参数
数据手册

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SCH1406 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	1.7 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.8 W
子类别：	FET General Purpose Powers	表面贴装：	YES
Base Number Matches：	1

SCH1406 数据手册

Ordering number : EN7749A

SCH1406

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

SCH1406

Features

• Low ON-resistance.

• Ultrahigh-speed switching.

• 1.8V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

4.8

Unit

±10

1.7

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm²✕0.8mm)

0.8

150

°C

Tch

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0V

D GS

µA

(BR)DSS

=20V, V =0V

DSS

GSS

=±8V, V =0V

±10

(off)

=10V, I =1mA

0.4

1.9

1.3

Forward Transfer Admittance

yfs



=10V, I =1A

2.8

160

200

280



(on)1

=1A, V =4V

210

280

390

mΩ

Static Drain-to-Source On-State Resistance

(on)2

(on)3

=0.5A, V =2.5V

=0.1A, V =1.8V

Marking : KF

Continued on next page.

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

Rev.0 I Page 1 of 4 I www.onsemi.com

SCH1406/D

12 3 4

中文翻译

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