生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.072 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SCH1343_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
SCH1345 | ONSEMI |
获取价格 |
Single P-Channel Power MOSFET | |
SCH1345-TL-H | ONSEMI |
获取价格 |
Single P-Channel Power MOSFET | |
SCH140 | VISHAY |
获取价格 |
Diode, | |
SCH1402 | SANYO |
获取价格 |
SCH1402 | |
SCH1404 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
SCH1406 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.7A I(D),LLCC | |
SCH1410 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
SCH1411 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
SCH1412 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.4A I(D),LLCC |