SCH1337
Power MOSFET
–30V, 150mΩ, –2A, Single P-Channel
This Low-profile High-power MOSFET is produced using ON
Semiconductor’s trench technology, which is specifically designed to
minimize gate charge and ultra low on resistance. This device is suitable for
applications with low gate charge driving or ultra low on resistance
requirements.
www.onsemi.com
Features
• Low On-Resistance
• 4V drive
• Pb-Free, Halogen Free and RoHS compliance
• Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)
V
R
(on) Max
I
D Max
DSS
DS
150mΩ@ −10V
255mΩ@ −4.5V
292mΩ@ −4V
−30V
−2A
Typical Applications
• LCD Driver
• Load Switch
ELECTRICAL CONNECTION
P-Channel
• Voltage Protection
1, 2, 5, 6
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Value
Unit
V
V
−30
20
3
DSS
V
V
GSS
I
−2
A
D
4
Drain Current (Pulse)
I
−8
A
DP
PW ≤ 10μs, duty cycle ≤ 1%
Power Dissipation
PACKING TYPE : TL
MARKING
When mounted on ceramic substrate
(900mm2
× 0.8mm)
P
0.8
W
D
Junction Temperature
Tj
150
°C
°C
YN
Storage Temperature
Tstg
−55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity<200V*”, so please take care when
handling.
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
*Machine Model
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2
0.8mm)
Symbol
Value
Unit
R
θJA
156.2
°C/W
×
© Semiconductor Components Industries, LLC, 2015
July 2015 - Rev. 3
1
Publication Order Number :
SCH1337/D