Datasheet > SCH1337-TL-W

SCH1337-TL-W

更新时间： 2024-11-26 01:17:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	547K
描述
Single P-Channel Power MOSFET

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SCH1337-TL-W 数据手册

SCH1337

Power MOSFET

–30V, 150mΩ, –2A, Single P-Channel

This Low-profile High-power MOSFET is produced using ON

Semiconductor’s trench technology, which is specifically designed to

minimize gate charge and ultra low on resistance. This device is suitable for

applications with low gate charge driving or ultra low on resistance

requirements.

www.onsemi.com

Features

• Low On-Resistance

• 4V drive

• Pb-Free, Halogen Free and RoHS compliance

• Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)

(on) Max

D Max

DSS

150mΩ@ −10V

255mΩ@ −4.5V

292mΩ@ −4V

−30V

−2A

Typical Applications

• LCD Driver

• Load Switch

ELECTRICAL CONNECTION

P-Channel

• Voltage Protection

1, 2, 5, 6

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Value

Unit

−30

DSS

GSS

−2

Drain Current (Pulse)

−8

PW ≤ 10μs, duty cycle ≤ 1%

Power Dissipation

PACKING TYPE : TL

MARKING

When mounted on ceramic substrate

(900mm²

× 0.8mm)

0.8

Junction Temperature

150

°C

Storage Temperature

Tstg

−55 to +150

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

2 : This product is designed to “ESD immunity<200V*”, so please take care when

handling.

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

*Machine Model

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm²

0.8mm)

Symbol

Value

Unit

θJA

156.2

°C/W

July 2015 - Rev. 3

Publication Order Number :

SCH1337/D

12 3 4 5

中文翻译

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