Datasheet > RN1707,LF

RN1707,LF

更新时间： 2024-10-31 21:06:43

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	296K
描述
Small Signal Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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RN1707,LF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	5.74	Base Number Matches：	1

RN1707,LF 数据手册

RN1707~RN1709

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1707, RN1708, RN1709

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in USV (ultra super mini type with 5 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2707 to RN2709

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1707

RN1708

RN1709

USV

JEDEC

―

JEITA

TOSHIBA

Weight: 6.2mg (typ.)

2-2L1A

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Equivalent Circuit

(Top View)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1707 to 1709

Collector-emitter voltage

RN1707

RN1708

RN1709

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

200

RN1707 to 1709

150

stg

−55 to150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Start of commercial production

1992-01

2014-03-01

12 3 4 5 6

中文翻译

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