Datasheet > RN1707JE(TPL3)

RN1707JE(TPL3)

更新时间： 2024-01-22 22:45:38

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	328K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

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技术参数
数据手册

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RN1707JE(TPL3) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.88	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1707JE(TPL3) 数据手册

RN1707JE~RN1709JE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN1707JE,RN1708JE,RN1709JE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

•

A wide range of resistor values is available to use in various circuit

designs.

Complementary to RN2707JE to RN2709JE

1.BASE1

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(B1)

(E)

(B2)

(C2)

(C1)

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1707JE

RN1708JE

RN1709JE

JEDEC

JEITA

―

TOSHIBA

2-2P1D

Weight:3mg (typ.)

Equivalent Circuit

(top view)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1707JE to 1709JE

Collector-emitter voltage

RN1707JE

RN1708JE

RN1709JE

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

100

RN1707JE to 1709JE

150

stg

−55 to150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2010-05-19

12 3 4 5 6

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