Datasheet > RN1707JE(TPL3)

RN1707JE(TPL3)

更新时间： 2024-02-09 09:47:55

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	328K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

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中文翻译

获取价格

技术参数
数据手册

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RN1707JE(TPL3) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.88	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1707JE(TPL3) 数据手册

RN1707JE~RN1709JE

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics

Symbol

Test Condition

= 50 V, I = 0

Min

Typ.

Max

Unit

⎯

100

500

0.15

0.145

0.311

⎯

CBO

CEO

Collector cut-off current

Emitter cut-off current

RN1707JE to 1709JE

= 50 V, I = 0

RN1707JE

RN1708JE

RN1709JE

RN1707JE

RN1708JE

RN1709JE

= 6 V, I = 0

0.081

0.078

0.167

= 7 V, I = 0

EBO

= 15 V, I = 0

DC current gain

= 5 V, I = 10 mA

⎯

Collector-emitter

saturation voltage

= 5 mA,

= 0.25 mA

RN1707JE to 1709JE

⎯

0.1

0.3

CE (sat)

RN1707JE

RN1708JE

0.7

1.0

2.2

0.5

0.6

1.5

⎯

1.8

2.6

5.8

Input voltage (ON)

= 0.2 V, I = 5 mA

I (ON)

RN1709JE

⎯

RN1707JE

⎯

Input voltage (OFF)

Transition frequency

= 5 V, I = 0.1 mA

RN1708JE

⎯

1.16

2.6

⎯

I (OFF)

RN1709JE

⎯

RN1707JE to 1709JE

= 10 V, I = 5 mA

250

MHz

Collector output

capacitance

= 10 V, I = 0,

RN1707JE to 1709JE

⎯

f = 1 MHz

RN1707JE

RN1708JE

RN1709JE

RN1707JE

RN1708JE

RN1709JE

Input resistor

Resistor ratio

⎯

kΩ

15.4

32.9

28.6

61.1

0.191 0.213 0.232

0.421 0.468 0.515

R1/R2

⎯

1.92

2.14

2.35

2010-05-19

123 4 5 6

中文翻译

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