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RN1706JE(TE85L,F) PDF预览

RN1706JE(TE85L,F)

更新时间： 2024-09-13 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
8页 539K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

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RN1706JE(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.78最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：80元件数量：2
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

RN1706JE(TE85L,F) 数据手册

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RN1701JE~RN1706JE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN1701JE, RN1702JE, RN1703JE  
RN1704JE, RN1705JE, RN1706JE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
•
•
Two devices are incorporated into an Extreme-Super-Mini (5 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more compact  
equipment and lowers assembly cost.  
•
•
A wide range of resistor values is available for use in various circuit  
designs.  
Complementary to RN2701JE to RN2706JE  
Equivalent Circuit and Bias Resistor Values  
1.BASE1  
2.EMITTER  
3.BASE2  
4.COLLECTOR2  
5.COLLECTOR1  
(B1)  
(E)  
(B2)  
(C2)  
(C1)  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1701JE  
RN1702JE  
RN1703JE  
RN1704JE  
RN1705JE  
RN1706JE  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
JEDEC  
JEITA  
―
―
22  
47  
TOSHIBA  
2-2P1D  
E
2.2  
4.7  
Weight: 0.003 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
5
4
V
V
50  
50  
V
V
CBO  
CEO  
RN1701JE  
to 1706JE  
Collector-emitter voltage  
Q1  
Q2  
RN1701JE  
to 1704JE  
10  
5
Emitter-base voltage  
V
C
V
EBO  
RN1705JE  
RN1706JE  
1
2
3
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
RN1701JE  
to 1706JE  
T
j
150  
T
−55 to 150  
°C  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Start of commercial production  
2000-06  
1
2014-03-01  
12345678

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