Datasheet > RN1317

RN1317

更新时间： 2024-11-11 22:43:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
8页	264K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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中文翻译

获取价格

数据手册

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RN1317 数据手册

RN1314~RN1318

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1314,RN1315,RN1316

RN1317,RN1318

Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2314~RN2318

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1314

RN1315

RN1316

RN1317

RN1318

4.7

2.2

4.7

JEDEC

―

EIAJ

SC-70

2-2E1A

TOSHIBA

Weight: 0.006g

Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1314~1318

Collector-emitter voltage

RN1314

RN1315

RN1316

RN1317

RN1318

Emitter-base voltage

EBO

Collector current

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1314~1318

°C

stg

2001-06-07

12 3 4 5 6 7 8

中文翻译

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