Datasheet > RN1317(TE85L,F)

RN1317(TE85L,F)

更新时间： 2024-11-12 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	456K
描述
TRANSISTOR NPN 50V 0.1A SC-70

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中文翻译

获取价格

技术参数
数据手册

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RN1317(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	5.73	Base Number Matches：	1

RN1317(TE85L,F) 数据手册

RN1314∼RN1318

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1314, RN1315, RN1316

RN1317, RN1318

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2314 to RN2318

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1314

RN1315

RN1316

RN1317

RN1318

4.7

2.2

4.7

JEDEC

―

JEITA

SC-70

2-2E1A

TOSHIBA

Weight: 0.006g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1314 to 1318

Collector-emitter voltage

RN1314

RN1315

RN1316

RN1317

RN1318

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

RN1314 to 1318

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2002-11

2014-03-01

12 3 4 5 6 7 8

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