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RN1318 PDF预览

RN1318

更新时间: 2024-01-05 13:50:37
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
8页 264K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1318 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-70
包装说明:SC-70, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.52
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.21最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

RN1318 数据手册

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RN1314~RN1318  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1314,RN1315,RN1316  
RN1317,RN1318  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2314~RN2318  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN1314  
RN1315  
RN1316  
RN1317  
RN1318  
1
10  
10  
10  
4.7  
10  
2.2  
4.7  
10  
47  
JEDEC  
EIAJ  
SC-70  
2-2E1A  
TOSHIBA  
Weight: 0.006g  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1314~1318  
Collector-emitter voltage  
RN1314  
RN1315  
RN1316  
RN1317  
RN1318  
5
6
Emitter-base voltage  
V
V
7
EBO  
15  
25  
Collector current  
I
100  
100  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1314~1318  
T
j
T
°C  
stg  
1
2001-06-07  

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