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RN1318(TE85L) PDF预览

RN1318(TE85L)

更新时间: 2024-11-12 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
8页 451K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal

RN1318(TE85L) 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.86Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):225极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

RN1318(TE85L) 数据手册

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RN1314RN1318  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1314,RN1315,RN1316  
RN1317,RN1318  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2314~RN2318  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN1314  
RN1315  
RN1316  
RN1317  
RN1318  
1
10  
10  
10  
4.7  
10  
2.2  
4.7  
10  
47  
JEDEC  
JEITA  
SC-70  
TOSHIBA  
2-2E1A  
Weight: 0.006g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1314~1318  
Collector-emitter voltage  
RN1314  
RN1315  
RN1316  
RN1317  
RN1318  
5
6
Emitter-base voltage  
V
V
7
EBO  
15  
25  
Collector current  
I
100  
100  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1314~1318  
T
j
T
stg  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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