Datasheet > RM50HA-20F

RM50HA-20F

更新时间： 2024-11-12 21:05:59

品牌	Logo	应用领域
三菱 - MITSUBISHI		快速恢复二极管局域网
页数	文件大小	规格书
3页	51K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 1000V V(RRM), Silicon,

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RM50HA-20F 技术参数

MITSUBISHI FAST RECOVERY DIODE MODULES

RM50HA-XXF

HIGH SPEED SWITCHING USE

INSULATED TYPE

RM50HA-XXF

• IDC

DC current .................................. 50A

• VRRM Repetitive peak reverse voltage

.......... 600/1000/1200V

• trr

Reverse recovery time .............0.8µs

• Insulated Type

• UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

Free wheel use, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

53.5

43.3

φ5.3

3–M4

LABEL

Feb.1999

12 3

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型号	品牌	获取价格	描述	数据表
RM50HA-XXF	MITSUBISHI	获取价格	HIGH SPEED SWITCHING USE INSULATED TYPE
RM50HG-12S	MITSUBISHI	获取价格	HIGH SPEED SWITCHING USE NON-INSULATED TYPE
RM50HG-12S	POWEREX	获取价格	Super Fast Recovery Single Diode (50 Amperes/600 Volts)
RM50HG-12S_01	MITSUBISHI	获取价格	FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
RM50HG-12S_09	MITSUBISHI	获取价格	HIGH SPEED SWITCHING USE NON-INSULATED TYPE
RM50N150DF	RECTRON	获取价格	Vdss (V) : 150 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 19 mOhms;Total Gate Charge (nQ
RM50N200HD	RECTRON	获取价格	Vdss (V) : 200 V;Id @ 25C (A) : 51 A;Rds-on (typ) (mOhms) : 28 mOhms;Total Gate Charge (nQ
RM50N200T2	RECTRON	获取价格	Vdss (V) : 200 V;Id @ 25C (A) : 51 A;Rds-on (typ) (mOhms) : 28 mOhms;Total Gate Charge (nQ
RM50N200T7	RECTRON	获取价格	Vdss (V) : 200 V;Id @ 25C (A) : 51 A;Rds-on (typ) (mOhms) : 28 mOhms;Total Gate Charge (nQ
RM50N200TI	RECTRON	获取价格	Vdss (V) : 200 V;Id @ 25C (A) : 51 A;Rds-on (typ) (mOhms) : 28 mOhms;Total Gate Charge (nQ