Datasheet > RM50N60TI

RM50N60TI

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	397K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 14 mOhms;Total Gate Charge (nQ) typ : 50 nQ;Maximum Power Dissipation (W) : 85 W;Vgs(th) (typ) : 1.9 V;Input Capacitance (Ciss) : 2050 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220F

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RM50N60TI 数据手册

RM50N60TI

Schematic diagram

Halogen-free

TO-220F top view

P/N suffix V means AEC-Q101 qualified, e.g:RM50N604IV

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

50N60

TO-220F

RM50N60TI

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

V^GS

Drain Current-Continuous

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

)

35.4

I_DM

Maximum Power Dissipation

P_D

0.3

Dearting factor

Single pulse avalanche energy ^{(Note 5)}

E_AS

245

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2019-03/15

REV:O

12 3 4 5 6 7

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与RM50N60TI相关器件

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RM50P30DF	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 7 mOhms;Total Gate Charge (nQ)
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