Datasheet > RM50N60DFV

RM50N60DFV

更新时间： 2024-10-31 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	814K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 65 mOhms;Total Gate Charge (nQ) typ : 9

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RM50N60DFV 数据手册

RM50N60DFV

N-Channel Enhancement Mode Power MOSFET

Description

The RM50N60DFV uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=60V,I_D=50A

R_DS(ON)

㸺

16mΩ @ V _GS=10V

R_DS(ON)18mΩ @ V_GS=4.5V

Schematic Diagram

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Application

ƽ PWM

ƽ Load Switching

P/N suffix V means AEC-Q101 qualified, e.g:RM50N60DFV

Halogen-free

Top View

Bottom View

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

50N60

RM50N60DFV

DFN5X6-8L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±±0

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

1±0

I_DM

Maximum Power Dissipation

104

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.6

W/ć

E_AS

390

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note ±)}

R_θJC

1.±

±0±3-06/15/59

REV:O

12 3 4 5 6 7

中文翻译

下载PDF

与RM50N60DFV相关器件

型号	品牌	获取价格	描述	数据表
RM50N60IP	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 16 mOhms;Total Gate Charge (nQ)
RM50N60LD	RECTRON	获取价格	N-Channel Enhancement Mode Power MOSFET
RM50N60LDV	RECTRON	获取价格	N-Channel Enhancement Mode Power MOSFET
RM50N60T2	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 14 mOhms;Total Gate Charge (nQ)
RM50N60TI	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 14 mOhms;Total Gate Charge (nQ)
RM50P30D3	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 7.3 mOhms;Total Gate Charge (nQ
RM50P30DF	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 7 mOhms;Total Gate Charge (nQ)
RM50P40LD	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 52 A;Rds-on (typ) (mOhms) : 15 mOhms;Total Gate Charge (nQ)
RM50P60ALD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 50 A;Rds-on (typ) (mOhms) : 23 mOhms;Total Gate Charge (nQ)
RM50TC-24	MITSUBISHI	获取价格	MEDIUM POWER GENERAL USE INSULATED TYPE