Datasheet > RM110N150HD

RM110N150HD

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1186K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 110 A;Rds-on (typ) (mOhms) : 6.0 mOhms;Total Gate Charge (nQ) typ

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RM110N150HD 数据手册

RM110N150HD

N-ChannelSuper Trench

Power MOSFET

Description

The RM110N150HD uses Super Trench technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R_DS(ON)and Q_g. This device is ideal for high-frequency

switching and synchro

nous rectification.

General Features

Schematic diagram

ƽ VDS =150V,ID =113A

RDS(ON) <8.8m @ VGS=10V

ƽ Excellent gate charge x RDS(on) product(FOM)

ƽ Very low on-resistance RDS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

TO-263-2L top view

100% UIS TESTED!

100% ꢀVds TESTED!

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM110N150HDV

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

-ꢀ

RM110N150HD

TO-263-2L

-ꢀ

110N150

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

113

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

430

273

I_DM

Maximum Power Dissipation

P_D

Derating factor

W/ć

Single pulse avalanche energy ^{(Note 5)}

E_AS

320

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_ꢀJC

0.55

ć/W

2020-05/69

REV:B

12 3 4 5 6 7

中文翻译

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