Datasheet > RJK0230DPA

RJK0230DPA

更新时间： 2024-11-11 07:20:11

品牌	Logo	应用领域
瑞萨 - RENESAS		肖特基二极管开关电源开关
页数	文件大小	规格书
11页	216K
描述
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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RJK0230DPA 数据手册

Preliminary Datasheet

RJK0230DPA

Silicon N Channel Power MOS FET with Schottky Barrier Diode

R07DS0541EJ0110

High Speed Power Switching

Rev.1.10

Sep 12, 2011

Features



Low on-resistance

Capable of 4.5 V gate drive

High density mounting

Pb-free

Halogen-free

Outline

RENESAS Package code: PWSN0008DD-B

(Package name: WPAK-D(3))

D1 D1 D1

S1/D2

1, 8

Gate

2, 3, 4, 9 Drain

5, 6, 7, 9 Source

S2 S2 S2

(Bottom View)

MOS1

MOS2 and

Schottky Barrier Diode

Absolute Maximum Ratings

(Ta = 25°C)

Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

Unit

MOS1

MOS2

V_DSS

V_GSS

I_D

±20

±12

Note1

Drain peak current

Reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

I_D(pulse)

200

I_DR

Note 2

I_AP

Note 2

E_AR

°C

Pch ^Note3

Tch

150

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tch = 25C, Rg  50 

3. Tc=25C

R07DS0541EJ0110 Rev.1.10

Sep 12, 2011

Page 1 of 10

12 3 4 5 6 7...11

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