Datasheet > RJK0330DPB-W1#J0

RJK0330DPB-W1#J0

更新时间： 2024-11-11 20:51:39

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	76K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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RJK0330DPB-W1#J0 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

RJK0330DPB-W1#J0 数据手册

Preliminary Datasheet

RJK0330DPB-01

Silicon N Channel Power MOS FET

Power Switching

R07DS0266EJ0500

(Previous: REJ03G1639-0400)

Rev.5.00

Mar 01, 2011

Features



High speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 2.1 m typ. (at V_GS= 10 V)



Pb-free

Halogen-free

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

1, 2, 3 Source

Gate

Drain

S S S

2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

20

Note1

Drain peak current

I_D(pulse)

180

Body-drain diode reverse drain current

Avalanche current

I_DR

Note 2

I_AP

Note 2

Avalanche energy

E_AR

48.4

Channel dissipation

Pch ^Note3

ch-c ^Note3

Tch

Channel to case thermal resistance

Channel temperature

2.27

150

C/W

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tch = 25C, Rg  50 

3. Tc = 25C

R07DS0266EJ0500 Rev.5.00

Mar 01, 2011

Page 1 of 6

12 3 4 5 6 7

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