Datasheet > RJK0305DPB

RJK0305DPB

更新时间： 2024-11-11 06:07:59

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	118K
描述
Silicon N Channel Power MOS FET Power Switching

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RJK0305DPB 数据手册

RJK0305DPB

Silicon N Channel Power MOS FET

Power Switching

REJ03G1353-0900

Rev.9.00

Apr 19, 2006

Features

•

High speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 6.7 mΩ typ. (at V_GS= 10 V)

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

1, 2, 3 Source

Gate

Drain

S S S

2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

+16/-12

Note1

Drain peak current

I_D(pulse)

I_DR

120

Body-drain diode reverse drain current

Avalanche current

Note 2

I_AP

Note 2

Avalanche energy

E_AR

Channel dissipation

Pch ^Note3

θch-C

Tch

Channel to Case Thermal Resistance

Channel temperature

2.78

150

°C/W

°C

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

Rev.9.00 Apr 19, 2006 page 1 of 6

12 3 4 5 6 7

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RJK0305DPB 替代型号

型号	品牌	替代类型	描述	数据表
RJK0305DPB-00-J0	RENESAS	功能相似	Silicon N Channel Power MOS FET Power Switching

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