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RJK0328DPB PDF预览

RJK0328DPB

更新时间: 2024-11-11 06:07:59
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
7页 118K
描述
Silicon N Channel Power MOS FET Power Switching

RJK0328DPB 数据手册

 浏览型号RJK0328DPB的Datasheet PDF文件第2页浏览型号RJK0328DPB的Datasheet PDF文件第3页浏览型号RJK0328DPB的Datasheet PDF文件第4页浏览型号RJK0328DPB的Datasheet PDF文件第5页浏览型号RJK0328DPB的Datasheet PDF文件第6页浏览型号RJK0328DPB的Datasheet PDF文件第7页 
RJK0328DPB  
Silicon N Channel Power MOS FET  
Power Switching  
REJ03G1637-0400  
Rev.4.00  
Apr 10, 2008  
Features  
High speed switching  
Capable of 4.5 V gate drive  
Low drive current  
High density mounting  
Low on-resistance  
RDS(on) = 1.6 mtyp. (at VGS = 10 V)  
Pb-free  
Outline  
RENESAS Package code: PTZZ0005DA-A  
(Package name: LFPAK)  
5
D
5
1, 2, 3 Source  
4
G
4
5
Gate  
Drain  
4
3
2
1
S S S  
1
2 3  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
30  
±20  
V
V
60  
A
Note1  
Drain peak current  
ID(pulse)  
240  
A
Body-drain diode reverse drain current  
Avalanche current  
IDR  
60  
A
Note 2  
IAP  
30  
A
Note 2  
Avalanche energy  
EAR  
90  
mJ  
W
Channel dissipation  
Pch Note3  
θch-C  
Tch  
65  
Channel to Case Thermal Resistance  
Channel temperature  
1.93  
150  
°C/W  
°C  
°C  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tch = 25°C, Rg 50 Ω  
3. Tc = 25°C  
REJ03G1637-0400 Rev.4.00 Apr 10, 2008  
Page 1 of 6  

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