Datasheet > RJK0330DPB

RJK0330DPB

更新时间： 2024-11-11 06:07:59

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	120K
描述
Silicon N Channel Power MOS FET Power Switching

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中文翻译

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技术参数
数据手册

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RJK0330DPB 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	LFPAK
包装说明：	,	针数：	5
Reach Compliance Code：	unknown	风险等级：	5.78
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

RJK0330DPB 数据手册

RJK0330DPB

Silicon N Channel Power MOS FET

Power Switching

REJ03G1639-0400

Rev.4.00

Apr 10, 2008

Features

•

High speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 2.1 mΩ typ. (at V_GS= 10 V)

Pb-free

•

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

1, 2, 3 Source

Gate

Drain

S S S

2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±20

Note1

Drain peak current

I_D(pulse)

180

Body-drain diode reverse drain current

Avalanche current

I_DR

Note 2

I_AP

Note 2

Avalanche energy

E_AR

48.4

Channel dissipation

Pch ^Note3

θch-C

Tch

Channel to Case Thermal Resistance

Channel temperature

2.27

150

°C/W

°C

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

REJ03G1639-0400 Rev.4.00 Apr 10, 2008

Page 1 of 6

12 3 4 5 6 7

中文翻译

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