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RJK0323JPD PDF预览

RJK0323JPD

更新时间: 2024-11-11 12:20:39
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
7页 121K
描述
Silicon N Channel MOS FET High Speed Power Switching

RJK0323JPD 数据手册

 浏览型号RJK0323JPD的Datasheet PDF文件第2页浏览型号RJK0323JPD的Datasheet PDF文件第3页浏览型号RJK0323JPD的Datasheet PDF文件第4页浏览型号RJK0323JPD的Datasheet PDF文件第5页浏览型号RJK0323JPD的Datasheet PDF文件第6页浏览型号RJK0323JPD的Datasheet PDF文件第7页 
Preliminary Datasheet  
RJK0323JPD  
Silicon N Channel MOS FET  
High Speed Power Switching  
R07DS0334EJ0100  
Rev.1.00  
Apr 18, 2011  
Features  
For Automotive application  
AEC-Q101 compliant  
Low on-resistance : RDS(on) = 7.0 mΩ typ.  
Low drive current  
Capable of 4.5 V gate drive  
Outline  
RENESAS Package code: PRSS0004ZD-C  
(Package name: DPAK (S))  
2, 4  
D
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
1 G  
1
2
3
S
3
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Value  
30  
Unit  
V
V
±20  
30  
A
1
Drain peak current  
ID (pulse) Note  
120  
30  
A
Body-drain diode reverse drain current  
Avalanche current  
IDR  
A
2
Note  
IAP  
30  
A
2
Note  
Avalanche energy  
EAR  
Pch Note  
90  
mJ  
W
°C  
°C  
3
Channel dissipation  
40  
4
Channel temperature  
Storage temperature  
TchNote  
150  
Tstg  
–55 to +150  
Notes: 1. PW 10 μs, duty cycle 1%  
2. Tch = 25°C, Rg 50 Ω  
3. Tc = 25°C  
Thermal Impedance Characteristics  
Channel to case thermal impedance θch-c: 3.125°C/W  
R07DS0334EJ0100 Rev.1.00  
Apr 18, 2011  
Page 1 of 6  

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