RGF1A - RGF1M
Features
• Glass passivated junction.
• For surface mounted application.
• Low forward voltage drop.
• High current capability.
0.181 (4.597)
0.157 (3.988)
0.062 (1.575)
0.055 (1.397)
0.114 (2.896)
0.098 (2.489)
2
1
• Easy pick and place.
• High surge current capability.
3.93
3.73
0.208 (5.283)
0.188 (4.775)
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
1.67
1.47
+
0.096 (2.438)
0.078 (1.981)
2.38
2.18
5.49
5.29
0.008 (0.203)
0.002 (0.051)
0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
Minimum Recommended
Land Pattern
1.0 Ampere Fast Recovery Rectifiers
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
@ TL = 125°C
1.0
A
Peak Forward Surge Current
if(surge)
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
30
A
PD
1.76
11.7
85
W
mW/°C
°C/W
RθJA
RθJL
Tstg
TJ
Thermal Resistance, Junction to Lead**
Storage Temperature Range
28
°C/W
°C
-65 to +175
-65 to +175
Operating Junction Temperature
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
1A
50
35
50
1B
100
70
1D
1G
400
280
400
1J
1K
1M
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
200
140
200
600
420
600
800
560
800
1000
700
V
V
V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
100
1000
5.0
100
A
A
µ
µ
@ rated VR
T = 25 C
°
A
T = 125 C
°
A
Maximum Forward Voltage @ 1.0 A
1.3
V
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
150
250
500
nS
pF
8.5
RGF1A-RGF1M, Rev. E
1998 Fairchild Semiconductor International