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RGF1K-HE3/67A PDF预览

RGF1K-HE3/67A

更新时间： 2024-11-15 21:13:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 78K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214BA, ROHS COMPLIANT, PLASTIC, GF1, 2 PIN, Signal Diode

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RGF1K-HE3/67A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214BA
包装说明：ROHS COMPLIANT, PLASTIC, GF1, 2 PIN针数：2
Reach Compliance Code：unknown风险等级：5.59
Base Number Matches：1

RGF1K-HE3/67A 数据手册

 浏览型号RGF1K-HE3/67A的Datasheet PDF文件第2页浏览型号RGF1K-HE3/67A的Datasheet PDF文件第3页浏览型号RGF1K-HE3/67A的Datasheet PDF文件第4页 
RGF1A thru RGF1M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
SUPERECTIFIER®  
• Ideal for automated placement  
• Fast switching for high efficiency  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
250 °C  
DO-214BA (GF1)  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PPRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
VF  
50 V to 1000 V  
Case: DO-214BA, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
30 A  
1.3 V  
trr  
150 ns, 250 ns, 500 ns  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
TYPICAL APPLICATIONS  
Polarity: Two bands indicate cathode end - 1st band  
denotes device type and 2nd band denotes repetitive peak  
reverse voltage rating  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT  
Device marking code  
RA  
50  
35  
50  
RB  
100  
70  
RD  
200  
140  
200  
RG  
400  
280  
400  
RJ  
RK  
800  
560  
800  
RM  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
at TL = 120 °C  
IF(AV)  
IFSM  
IR(AV)  
1.0  
30  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
Maximum full load reverse current, full cycle  
average TA = 55 °C  
50  
μA  
°C  
Operating junction and storage temperature range TJ, TSTG  
- 65 to + 175  
Document Number: 88697  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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