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RGF1M/19-HE3 PDF预览

RGF1M/19-HE3

更新时间： 2024-11-16 08:14:35
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
2页 35K
描述
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, GF1, 2 PIN, Signal Diode

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中文翻译

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RGF1M/19-HE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214BA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.28
其他特性：PATENTED DEVICE, METALLURGICALLY BONDED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-214BAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：1000 V最大反向恢复时间：0.5 µs
表面贴装：YES端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40

RGF1M/19-HE3 数据手册

 浏览型号RGF1M/19-HE3的Datasheet PDF文件第2页 
RGF1A thru RGF1M  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount Glass Passivated Junction  
Fast Switching Rectifier  
Reverse Voltage 50 to 1000V  
Forward Current 1.0A  
DO-214BA (GF1)  
®
0.066 (1.68)  
0.040 (1.02)  
Mounting Pad Layout  
0.066 MIN.  
(1.68 MIN.)  
0.094 MAX.  
(2.38 MAX.)  
Dimensions in inches and (millimeters)  
0.187 (4.75)  
0.167 (4.24)  
Glass-plastic encapsulation technique is covered by Patent  
No. 3,996,602, brazed-lead assembly by Patent No.  
3,930,306 and lead forming by Patent No. 5,151,846  
0.015 (0.38)  
0.052 MIN.  
(1.32 MIN.)  
0.0065 (0.17)  
0.220  
(5.58) REF  
0.108 (2.74)  
0.118 (3.00)  
0.100 (2.54)  
0.098 (2.49)  
Features  
0.114 (2.90)  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
0.006 (0.152) TYP.  
0.060 (1.52)  
0.030 (0.76)  
0.094 (2.39)  
0.226 (5.74)  
0.196 (4.98)  
• Ideal for surface mount automotive applications  
• High temperature metallurgically bonded construction  
• Cavity-free glass passivated junction  
Mechanical Data  
•
Capable of meeting environmental standards of MIL-S-19500  
Case: JEDEC DO-214BA, molded plastic over glass body  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
• Built-in strain relief • Easy pick and place  
• Fast switching for high efficiency  
Polarity: Color band denotes cathode end  
• High temperature soldering guaranteed:  
450°C/5 seconds at terminals.  
Mounting Position: Any  
Weight: 0.0048 oz, 0.12 g  
Packaging codes/options:  
• Complete device submersible temperature of 265°C for  
10 seconds in solder bath  
19/6.5K per 13” Reel (12mm Tape)  
17/1.5K per 7” Reel (12mm Tape)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit  
Device marking code  
RA  
50  
35  
50  
RB  
100  
70  
RD  
200  
140  
200  
RG  
400  
280  
400  
1.0  
RJ  
RK  
800 1000  
560 700  
800 1000  
RM  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
600  
420  
600  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 120°C  
100  
IF(AV)  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
30  
50  
A
µA  
Max. full load reverse current, full cycle average TA = 55°C IR(AV)  
Typical thermal resistance(1)  
RΘJA  
RΘJL  
80  
28  
°C/W  
°C  
Operating junction and storage temperature range  
TJ,TSTG  
–65 to +175  
Electrical Characteristics(TJ = 25°C unless otherwise noted)  
Parameter  
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit  
Maximum instantaneous forward voltage at 1.0A  
VF  
1.30  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25°C  
TA = 125°C  
5.0  
100  
IR  
µA  
Typical reverse recovery time at  
IF = 0.5A, IR = 1.0A, Irr = 0.25 A  
trr  
150  
250  
500  
ns  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
8.5  
pF  
Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas  
Document Number 88697  
08-Feb-02  
www.vishay.com  
1
12

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