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RGF1M-7000HE3/5CA PDF预览

RGF1M-7000HE3/5CA

更新时间： 2024-11-15 22:59:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 84K
描述
DIODE GEN PURP 1KV 1A DO214BA

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RGF1M-7000HE3/5CA 数据手册

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RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
Superectifier®  
• Ideal for automated placement  
• Fast switching for high efficiency  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
250 °C  
GF1 (DO-214BA)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3  
Cathode  
Anode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
TYPICAL APPLICATIONS  
3
D
3
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
D
3D Models  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
1.0 A  
Case: GF1 (DO-214BA), molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
IFSM  
30 A  
1.3 V  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ...)  
VF  
trr  
150 ns, 250 ns, 500 ns  
175 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
E3 and HE3 suffix meet JESD 201 class 2 whisker test  
Package  
GF1 (DO-214BA)  
Single  
Polarity: two bands indicate cathode end - 1st band  
denotes device type and 2nd band denotes repetitive peak  
reverse voltage rating  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT  
Device marking code  
RA  
50  
35  
50  
RB  
100  
70  
RD  
200  
140  
200  
RG  
400  
280  
400  
RJ  
RK  
800  
560  
800  
RM  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
at TL = 120 °C  
IF(AV)  
IFSM  
IR(AV)  
1.0  
30  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
Maximum full load reverse current, full cycle  
average TA = 55 °C  
50  
μA  
°C  
Operating junction and storage temperature range TJ, TSTG  
-65 to +175  
Revision: 17-Aug-2021  
Document Number: 88697  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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