是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMA, 2 PIN | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
Factory Lead Time: | 1 week | 风险等级: | 0.6 |
Is Samacsys: | N | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.3 V | JEDEC-95代码: | DO-214AC |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值正向电流: | 30 A |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 1 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 最大功率耗散: | 1.76 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 1000 V |
最大反向恢复时间: | 0.5 µs | 子类别: | Rectifier Diodes |
表面贴装: | YES | 端子面层: | TIN |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
RS1M | ONSEMI |
类似代替 |
1.0A快速恢复整流器 | |
GF1M | FAIRCHILD |
功能相似 |
General Purpose Rectifiers (Glass Passivated) | |
STTH110A | STMICROELECTRONICS |
功能相似 |
HIGH VOLTAGE ULTRAFAST RECTIFIER |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RGF1M/17 | VISHAY |
获取价格 |
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214BA, PLASTIC, GF1, 2 PIN | |
RGF1M/17-HE3 | VISHAY |
获取价格 |
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, GF1, 2 PIN, Signal Diode | |
RGF1M/19-HE3 | VISHAY |
获取价格 |
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, GF1, 2 PIN, Signal Diode | |
RGF1M-7000HE3/5CA | VISHAY |
获取价格 |
DIODE GEN PURP 1KV 1A DO214BA | |
RGF1MA | TAITRON |
获取价格 |
1.0A Sintered Glass Passivated Fast Recovery Rectifier | |
RGF1M-E3/67A | VISHAY |
获取价格 |
Diode Switching 1KV 1A 2-Pin DO-214BA T/R | |
RGF1M-HE3 | VISHAY |
获取价格 |
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal | |
RGF1MHE3/17 | VISHAY |
获取价格 |
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, GF1, 2 PIN, Signal Diode | |
RGF1MHE3/19 | VISHAY |
获取价格 |
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, GF1, 2 PIN, Signal Diode | |
RGF1MHE3/5CA | VISHAY |
获取价格 |
DIODE GEN PURP 1KV 1A DO214BA |