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STTH110A PDF预览

STTH110A

更新时间: 2024-11-13 22:19:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管光电二极管高压PC
页数 文件大小 规格书
5页 49K
描述
HIGH VOLTAGE ULTRAFAST RECTIFIER

STTH110A 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:11 weeks
风险等级:1.67Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:180484
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Diodes MouldedSamacsys Footprint Name:SMA
Samacsys Released Date:2015-09-01 16:33:09Is Samacsys:N
其他特性:HIGH RELIABILITY, FRE WHEELING DIODE, SNUBBER DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.42 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:18 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.075 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

STTH110A 数据手册

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®
STTH110/A  
HIGH VOLTAGE ULTRAFAST RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
1 A  
1000 V  
175 °C  
1.42 V  
Tj (max)  
VF (max)  
FEATURES AND BENEFITS  
Low forward voltage drop  
High reliability  
High surge current capability  
Soft switching for reduced EMI disturbances  
Planar technology  
DO-41  
STTH110  
DESCRIPTION  
The STTH110, which is using ST ultrafast high  
voltage planar technology, is specially suited for  
free-wheeling, clamping, snubbering, demagneti-  
zation in power supplies and other power switching  
applications.  
SMA  
STTH110A  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
1000  
700  
1
Unit  
V
VRRM  
V(RMS) RMS voltage  
IF(AV) Average forward current  
V
Tl = 100°C δ =0.5  
Tl = 125°C δ =0.5  
DO-41  
SMA  
A
1
IFSM  
Forward surge current t = 8.3 ms  
DO-41  
SMA  
20  
A
18  
Tstg  
Tj  
Storage temperature range  
- 50 + 175  
+ 175  
°C  
°C  
Maximum operating junction temperature  
January 2003 - Ed: 1  
1/5  

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