Datasheet > STTH112_07

STTH112_07

更新时间： 2024-02-10 11:05:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压
页数	文件大小	规格书
7页	89K
描述
High voltage ultrafast rectifier

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STTH112_07 数据手册

STTH112

High voltage ultrafast rectifier

Main product characteristics

I_F(AV)

V_RRM

T_{j (max)}

V_{F (max)}

1 A

1200 V

175° C

1.65 V

Features and benefits

DO-41

STTH112

■ Low forwarded voltage drop

■ High reliability

■ High surge current capability

■ Soft switching for reduced EMI disturbances

■ Planar technology

Description

SMA

STTH112A

SMB

STTH112U

The STTH112, which is using ST ultrafast high

voltage planar technology, is specially suited for

free-wheeling, clamping, snubbering,

demagnetization in power supplies and other

power switching applications

Table 1.

Symbol

Absolute ratings (limiting values)

Parameter

Value

Unit

V_RRM

Repetitive peak reverse voltage

RMS voltage

1200

850

V_(RMS)

Tl = 85° C

δ = 0.5

DO-41

I_F(AV)

Average forward current

Tl = 115° C

Tl = 125° C

δ = 0.5 SMA

δ =0 .5 SMB

DO-41

I_FSM

Forward surge current t = 8.3 ms

SMA

SMB

T_stg

T_j

Storage temperature range

- 50 + 175

+ 175

°C

Maximum operating junction temperature

March 2007

Rev 4

1/7

www.st.com

12 3 4 5 6 7

中文翻译

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