Datasheet > STTH12002TV

STTH12002TV

更新时间： 2024-09-08 04:30:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管功效
页数	文件大小	规格书
5页	90K
描述
HIGH EFFICIENCY ULTRAFAST DIODE

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中文翻译

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数据手册

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STTH12002TV 数据手册

STTH12002TV

HIGH EFFICIENCY ULTRAFAST DIODE

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 60 A

200 V

Tj (max)

V_F(typ)

t_rr(typ)

150 °C

0.73 V

35 ns

FEATURES AND BENEFITS

■

Suited for welding and high power equipment

Very low forward losses

Low recovery times

High surge current capability

Insulated:

ISOTOP

STTH12002TV1

Insulating voltage = 2500 V_RMS

Capacitance < 45 pF

■

Low leakage current

DESCRIPTION

Dual center tap rectifier suited for welding

equipment and high power industrial application.

Packaged in ISOTOP, this device is intended for

use in the secondary rectification of power

converters.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

200

100

Unit

V_RRM

I_F(RMS)RMS forward current

Per diode

I_F(AV)

I_FSM

T_stg

Average forward current δ =0.5

Tc = 105°C

Surge non repetitive forward current

Storage temperature range

tp = 10 ms Sinusoidal per diode

700

- 55 + 150 °C

150 °C

Maximum operating junction temperature

February 2004 - Ed: 1

1/5

12 3 4 5

中文翻译

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