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STTH1210-Y PDF预览

STTH1210-Y

更新时间: 2024-11-27 12:23:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
8页 106K
描述
Automotive ultrafast recovery - high voltage diode

STTH1210-Y 数据手册

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STTH1210-Y  
Automotive ultrafast recovery - high voltage diode  
Datasheet production data  
Features  
A
K
A
AEC-Q101 qualified  
Ultrafast, soft recovery  
Very low conduction and switching losses  
High frequency and high pulsed current  
operation  
High reverse voltage capability  
High junction temperature  
K
TO-220AC  
STTH1210DY  
Description  
Table 1.  
Device summary  
IF(AV)  
The high quality design of this diode has  
12 A  
1000 V  
175 °C  
1.30 V  
48 ns  
produced a device with low leakage current,  
regularly reproducible characteristics and intrinsic  
ruggedness. These characteristics make it ideal  
for heavy duty applications that demand long term  
reliability, like automotive applications.  
VRRM  
Tj  
VF (typ)  
trr (typ)  
These diodes also fit into auxiliary functions such  
as snubber, bootstrap, and demagnetization  
applications.  
The improved performance in low leakage  
current, and therefore thermal runaway guard  
band, is an immediate competitive advantage for  
this device.  
October 2012  
Doc ID 018921 Rev 1  
1/8  
This is information on a product in full production.  
www.st.com  
8

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