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STTH1302XXX PDF预览

STTH1302XXX

更新时间: 2024-02-03 08:36:37
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管功效
页数 文件大小 规格书
7页 115K
描述
HIGH EFFICIENCY ULTRAFAST DIODE

STTH1302XXX 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.79Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:70 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:6.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.025 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

STTH1302XXX 数据手册

 浏览型号STTH1302XXX的Datasheet PDF文件第2页浏览型号STTH1302XXX的Datasheet PDF文件第3页浏览型号STTH1302XXX的Datasheet PDF文件第4页浏览型号STTH1302XXX的Datasheet PDF文件第5页浏览型号STTH1302XXX的Datasheet PDF文件第6页浏览型号STTH1302XXX的Datasheet PDF文件第7页 
STTH1302CT/CG/CFP  
®
HIGH EFFICIENCY ULTRAFAST DIODE  
MAIN PRODUCT CHARACTERISTICS  
A1  
A2  
K
K
IF(AV)  
2 x 6.5 A  
200 V  
VRRM  
Tj (max)  
VF (max)  
trr (max)  
175 °C  
0.95 V  
25 ns  
A2  
K
K
A1  
FEATURES AND BENEFITS  
Suited for SMPS  
Low losses  
Low forward and reverse recovery times  
High surge current capability  
TO-220AB  
STTH1302CT  
A2  
A1  
D2PAK  
High junction temperature  
STTH1302CG  
Insulated package: TO-220FPAB:  
Insulation voltage = 2000 VDC  
Capacitance = 12 pF  
A2  
K
A1  
DESCRIPTION  
TO-220FPAB  
Dual center tap rectifier suited for Switch  
Mode Power Supplies and high frequency DC to  
DC converters.  
STTH1302CFP  
This device is especially intended for use in low  
voltage, high frequency inverters, free wheeling  
and polarity protection applications.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
VRRM  
Parameter  
Value  
200  
20  
Unit  
Repetitive peak reverse voltage  
RMS forward current  
V
A
A
IF(RMS)  
IF(AV)  
Average forward  
current δ = 0.5  
TO-220AB /  
D2PAK  
Tc = 155°C Per diode  
Tc = 145°C Per device  
Tc = 135°C Per diode  
Tc = 110°C Per device  
tp = 10 ms sinusoïdal  
6.5  
13  
TO-220FPAB  
6.5  
13  
A
IFSM  
Tstg  
Tj  
Surge non repetitive forward current  
Storage temperature range  
70  
A
-65 to+175 °C  
175 °C  
Maximum operating junction temperature  
August 2002 - Ed: 1A  
1/7  

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