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STTH1506DI PDF预览

STTH1506DI

更新时间: 2024-02-16 23:15:21
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管局域网超快速恢复二极管
页数 文件大小 规格书
5页 75K
描述
15A, 600V, SILICON, RECTIFIER DIODE, TO-220AC

STTH1506DI 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TOP3I, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:2.26
Is Samacsys:N应用:HYPER FAST RECOVERY
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.6 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:130 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STTH1506DI 数据手册

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®
STTH1506DPI  
Tandem 600V HYPERFAST BOOST DIODE  
MAJOR PRODUCTS CHARACTERISTICS  
IF(AV)  
VRRM  
15 A  
600 V  
150 °C  
2.4 V  
1
2
Tj (max)  
VF (max)  
IRM (typ.)  
trr (typ.)  
4.8 A  
16 ns  
2
FEATURES AND BENEFITS  
1
ESPECIALLY SUITED AS BOOST DIODE IN  
CONTINUOUS MODE POWER FACTOR  
CORRECTORS AND HARD SWITCHING  
CONDITIONS  
DOP3I  
(insulated)  
DESIGNED FOR HIGH DI/DT OPERATION.  
HYPERFAST RECOVERY CURRENT TO  
COMPETE WITH SIC DEVICES. ALLOWS  
DOWNSIZING OF MOSFET AND HEATSINKS  
DESCRIPTION  
INTERNAL CERAMIC INSULATED DEVICES  
WITH EQUAL THERMAL CONDITIONS FOR  
BOTH 300V DIODES  
The TURBOSWITCH “H” is an ultra high  
performance diode composed of two 300V dice in  
series. TURBOSWITCH “H” family drastically cuts  
losses in the associated MOSFET when run at  
high dIF/dt.  
INSULATION  
(2500VRMS  
)
ALLOWS  
PLACEMENT ON SAME HEATSINK AS  
MOSFET AND FLEXIBLE HEATSINKING ON  
COMMON OR SEPARATE HEATSINK  
STATIC AND DYNAMIC EQUILIBRIUM OF  
INTERNAL DIODES ARE WARRANTED BY  
DESIGN  
PACKAGE CAPACITANCE: C=16pF  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
VRRM  
600  
V
Repetitive peak reverse voltage  
RMS forward current  
IF(RMS)  
IFSM  
Ipeak  
Tstg  
26  
130  
A
A
Surge non repetitive forward current  
Peak current waveform  
tp = 10 ms sinusoidal  
35  
A
δ = 0.15 Tc = 120°C  
-65 +150  
+ 150  
°C  
°C  
Storage temperature range  
Tj  
Maximum operating junction temperature  
October 2003 - Ed: 2A  
1/5  

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