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STTH1512D PDF预览

STTH1512D

更新时间: 2024-11-23 12:56:43
品牌 Logo 应用领域
THINKISEMI 二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
3页 491K
描述
15 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

STTH1512D 数据手册

 浏览型号STTH1512D的Datasheet PDF文件第2页浏览型号STTH1512D的Datasheet PDF文件第3页 
STTH1512D  
®
STTH1512D  
Pb Free Plating Product  
15 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode  
TO-220AC/TO-220C-2P  
APPLICATION  
Cathode(Bottom Side Metal Heatsink)  
· Freewheeling, Snubber, Clamp  
· Inversion Welder  
· PFC  
· Plating Power Supply  
· Ultrasonic Cleaner and Welder  
· Converter & Chopper  
· UPS  
Anode  
PRODUCT FEATURE  
Cathode  
· Ultrafast Recovery Time  
Internal Configuration  
· Soft Recovery Characteristics  
· Low Recovery Loss  
Base Backside  
· Low Forward Voltage  
· High Surge Current Capability  
· Low Leakage Current  
GENERAL DESCRIPTION  
STTH1512D using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.  
ABSOLUTE MAXIMUM RATINGS  
T C =25°C unless otherwise specified  
Symbol  
VR  
Parameter/Test Conditions  
Values  
Unit  
Maximum D.C. Reverse Voltage  
Maximum Repetitive Reverse Voltage  
Average Forward Current  
RMS Forward Current  
V
1200  
VRRM  
IF(AV)  
IF(RMS)  
IFSM  
TC=100  
TC=100℃  
15  
21  
A
TJ=45,t=10ms, 50Hz, Sine  
Non Repetitive Surge Forward Current  
Power Dissipation  
150  
125  
PD  
W
TJ  
Junction Temperature  
-55 to +150  
-55 to +125  
1.1  
TSTG  
Storage Temperature Range  
Module to Sink  
Torque  
RthJC  
RecommendedM3)  
Nm  
/W  
g
Junction to Case Thermal Resistance  
1.0  
Weight  
2.5  
ELECTRICAL CHARACTERISTICS  
T C =25°C unless otherwise specified  
Symbol  
Parameter/Test Conditions  
Min. Typ. Max. Unit  
Maximum Reverse Leakage Current  
VR =1200V  
IRM  
μA  
10  
1
VR =1200V, TJ = 125℃  
IF=15A  
mA  
Forward Voltage  
2.8  
2.3  
25  
3.2  
VF  
V
IF=15A,TJ=125℃  
Reverse Recovery Time (IF = 1A, dIF/dt = -200A/μs, VR = 30V)  
trr  
30  
40  
ns  
ns  
ns  
A
Reverse Recovery Time (IF = 0.5A, IR=1A, IRR = 0.25A)  
trr  
35  
IF =15A,VR =600V,  
Reverse Recovery Time  
trr  
72  
5
dIF/dt = -200A/μs  
IRRM  
trr  
Maximum Reverse Recovery Current  
Reverse Recovery Time  
IF = 15A,VR =600V,  
dIF/dt = -200A/μs ,TJ=125℃  
ns  
A
240  
7.5  
IRRM  
Maximum Reverse Recovery Current  
Rev.05  
© 2006 Thinki Semiconductor Co.,Ltd.  
Page 1/3  
http://www.thinkisemi.com/  

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