Datasheet > STTH1302CT_03

STTH1302CT_03

更新时间： 2024-01-14 01:07:56

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管功效
页数	文件大小	规格书
7页	116K
描述
HIGH EFFICIENCY ULTRAFAST DIODE

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中文翻译

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数据手册

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STTH1302CT_03 数据手册

STTH1302CT/CG/CFP

HIGH EFFICIENCY ULTRAFAST DIODE

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

2 x 6.5 A

200 V

V_RRM

Tj (max)

V_F(max)

trr (max)

175 °C

0.95 V

25 ns

FEATURES AND BENEFITS

■

Suited for SMPS

Low losses

Low forward and reverse recovery times

High surge current capability

TO-220AB

STTH1302CT

D²PAK

High junction temperature

STTH1302CG

Insulated package: TO-220FPAB:

Insulation voltage = 2000 V_DC

Capacitance = 12 pF

DESCRIPTION

TO-220FPAB

Dual center tap rectifier suited for Switch

Mode Power Supplies and high frequency DC to

DC converters.

STTH1302CFP

This device is especially intended for use in low

voltage, high frequency inverters, free wheeling

and polarity protection applications.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

Parameter

Value

200

Unit

Repetitive peak reverse voltage

RMS forward current

I_F(RMS)

I_F(AV)

Average forward

current δ = 0.5

TO-220AB /

D²PAK

Tc = 155°C Per diode

Tc = 145°C Per device

Tc = 135°C Per diode

Tc = 110°C Per device

tp = 10 ms sinusoïdal

6.5

TO-220FPAB

6.5

I_FSM

T_stg

Surge non repetitive forward current

Storage temperature range

-65 to+175 °C

175 °C

Maximum operating junction temperature

October 2003 - Ed: 2A

1/7

12 3 4 5 6 7

中文翻译

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