RGF1A thru RGF1M
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Glass Passivated Junction
Fast Switching Rectifier
Reverse Voltage 50 to 1000V
Forward Current 1.0A
DO-214BA (GF1)
®
0.066 (1.68)
0.040 (1.02)
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.094 MAX.
(2.38 MAX.)
Dimensions in inches and (millimeters)
0.187 (4.75)
0.167 (4.24)
Glass-plastic encapsulation technique is covered by Patent
No. 3,996,602, brazed-lead assembly by Patent No.
3,930,306 and lead forming by Patent No. 5,151,846
0.015 (0.38)
0.052 MIN.
(1.32 MIN.)
0.0065 (0.17)
0.220
(5.58) REF
0.108 (2.74)
0.118 (3.00)
0.100 (2.54)
0.098 (2.49)
Features
0.114 (2.90)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
0.006 (0.152) TYP.
0.060 (1.52)
0.030 (0.76)
0.094 (2.39)
0.226 (5.74)
0.196 (4.98)
• Ideal for surface mount automotive applications
• High temperature metallurgically bonded construction
• Cavity-free glass passivated junction
Mechanical Data
•
Capable of meeting environmental standards of MIL-S-19500
Case: JEDEC DO-214BA, molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Built-in strain relief • Easy pick and place
• Fast switching for high efficiency
Polarity: Color band denotes cathode end
• High temperature soldering guaranteed:
450°C/5 seconds at terminals.
Mounting Position: Any
Weight: 0.0048 oz, 0.12 g
Packaging codes/options:
• Complete device submersible temperature of 265°C for
10 seconds in solder bath
19/6.5K per 13” Reel (12mm Tape)
17/1.5K per 7” Reel (12mm Tape)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
Device marking code
RA
50
35
50
RB
100
70
RD
200
140
200
RG
400
280
400
1.0
RJ
RK
800 1000
560 700
800 1000
RM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
600
420
600
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 120°C
100
IF(AV)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
30
50
A
µA
Max. full load reverse current, full cycle average TA = 55°C IR(AV)
Typical thermal resistance(1)
RΘJA
RΘJL
80
28
°C/W
°C
Operating junction and storage temperature range
TJ,TSTG
–65 to +175
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
Maximum instantaneous forward voltage at 1.0A
VF
1.30
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 125°C
5.0
100
IR
µA
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25 A
trr
150
250
500
ns
Typical junction capacitance at 4.0V, 1MHz
CJ
8.5
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
Document Number 88697
08-Feb-02
www.vishay.com
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