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RGF1KHE3/5CA PDF预览

RGF1KHE3/5CA

更新时间： 2024-11-15 20:10:43
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 82K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214BA, ROHS COMPLIANT, PLASTIC, GF1, 2 PIN, Signal Diode

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RGF1KHE3/5CA 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：DO-214BA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.03
Is Samacsys：NBase Number Matches：1

RGF1KHE3/5CA 数据手册

 浏览型号RGF1KHE3/5CA的Datasheet PDF文件第2页浏览型号RGF1KHE3/5CA的Datasheet PDF文件第3页浏览型号RGF1KHE3/5CA的Datasheet PDF文件第4页 
RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Ideal for automated placement  
• Fast switching for high efficiency  
Superectifier®  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
250 °C  
• AEC-Q101 qualified available  
GF1 (DO-214BA)  
- Automotive ordering code: base P/NHE3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
IFSM  
VF  
30 A  
1.3 V  
Case: GF1 (DO-214BA), molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
trr  
150 ns, 250 ns, 500 ns  
175 °C  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ...)  
TJ max.  
Package  
Diode variations  
GF1 (DO-214BA)  
Single  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: two bands indicate cathode end - 1st band  
denotes device type and 2nd band denotes repetitive peak  
reverse voltage rating  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT  
Device marking code  
RA  
50  
35  
50  
RB  
100  
70  
RD  
200  
140  
200  
RG  
400  
280  
400  
RJ  
RK  
800  
560  
800  
RM  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
IF(AV)  
IFSM  
IR(AV)  
1.0  
30  
A
A
at TL = 120 °C  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
Maximum full load reverse current, full cycle  
average TA = 55 °C  
50  
μA  
°C  
Operating junction and storage temperature range TJ, TSTG  
-65 to +175  
Revision: 25-Aug-17  
Document Number: 88697  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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