Datasheet > RFP25N05L

RFP25N05L

更新时间： 2024-11-11 22:11:11

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
6页	50K
描述
25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET

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RFP25N05L 数据手册

RFP25N05L

Data Sheet

July 1999

File Number 2270.3

25A, 50V, 0.047 Ohm, Logic Level,

N-Channel Power MOSFET

Features

• 25A, 50V

The RFP25N05L is an N-Channel logic level power

• r

= 0.047Ω

DS(ON)

MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of

LSI integrated circuits gives optimum utilization of silicon,

resulting in outstanding performance. The RFP25N05L was

designed for use with logic level (5V) driving sources in

applications such as programmable controllers, automotive

switching, switching regulators, switching converters, motor

relay drivers and emitter switches for bipolar transistors. This

performance is accomplished through a special gate oxide

design which provides full rated conductance at gate biases

in the 3V to 5V range, thereby facilitating true on-off power

control directly from logic circuit supply voltages.

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA09871.

• Related Literature

Ordering Information

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

BRAND

RFP25N05L

TO-220AB

Symbol

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

6-243

12 3 4 5 6

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