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RFP2N08 PDF预览

RFP2N08

更新时间: 2024-09-23 22:43:59
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
4页 50K
描述
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

RFP2N08 数据手册

 浏览型号RFP2N08的Datasheet PDF文件第2页浏览型号RFP2N08的Datasheet PDF文件第3页浏览型号RFP2N08的Datasheet PDF文件第4页 
RFP2N08,  
RFP2N10  
Semiconductor  
2A, 80V and 100V, 1.05 Ohm,  
N-Channel Power MOSFETs  
July 1998  
Features  
Description  
• 2A, 80V and 100V  
• r 1.05  
These are N-channel enhancement mode silicon gate power  
field effect transistors designed for applications such as  
switching regulators, switching converters. motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
DS(ON)  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Formerly developmental type TA09282.  
• Majority Carrier Device  
• Related Literature  
Symbol  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
D
Ordering Information  
G
PART NUMBER  
RFP2N08  
PACKAGE  
TO-220AB  
TO-220AB  
BRAND  
RFP2N08  
RFP2N10  
S
RFP2N10  
NOTE: When ordering, use entire part number.  
Packaging  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.  
File Number 2883.1  
Copyright © Harris Corporation 1998  
5-1  

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