Datasheet > RD48F3000P0XBQ0

RD48F3000P0XBQ0

更新时间： 2024-11-15 03:19:43

品牌	Logo	应用领域
英特尔 - INTEL		内存集成电路闪存
页数	文件大小	规格书
104页	1595K
描述
Flash, 8MX16, 85ns, PBGA80, 8 X 10 MM, 1.20 MM HEIGHT, SCSP-88/80

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RD48F3000P0XBQ0 数据手册

Intel StrataFlash Embedded Memory (P33)

Datasheet

Product Features

High performance:

Security:

— 85 ns initial access

— One-Time Programmable Registers:

— 64 unique factory device identifier bits

— 2112 user-programmable OTP bits

— Selectable OTP space in Main Array:

— Four pre-defined 128-KByte blocks (top or

bottom configuration).

— 52MHz with zero wait states, 17ns clock-to-

data output synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming

(BEFP) at 5 µs/byte (Typ)

— Up to Full Array OTP Lockout

— Absolute write protection: V = V

— 3.0 V buffered programming at 7 µs/byte

(Typ)

Architecture:

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

Software:

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Intel Flash Data Integrator optimized

— 128-KByte main blocks

— Basic Command Set and Extended Command

Voltage and Power:

Set compatible

— V

(core) voltage: 2.3 V – 3.6 V

CCQ

— Common Flash Interface capable

Density and Packaging

(I/O) voltage: 2.3 V – 3.6 V

— Standby current: 35µA (Typ) for 64-Mbit

— 4-Word synchronous read current:

16 mA (Typ) at 52MHz

— 56-Lead TSOP package (64, 128, 256, 512-

Mbit)

— 64-Ball Intel® Easy BGA package (64, 128,

256, 512-Mbit)

Quality and Reliability

— Operating temperature: –40 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology

— Intel® QUAD+ SCSP (64, 128, 256, 512-Mbit)

— 16-bit wide data bus

Order Number: 314749-004

November 2007

12 3 4 5 6 7...104

中文翻译

下载PDF

与RD48F3000P0XBQ0相关器件

型号	品牌	获取价格	描述	数据表
RD48F3000P0XBQ0A	NUMONYX	获取价格	Flash, 8MX16, 85ns, PBGA64
RD48F3000P0XBQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F3000P0ZBQ0	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
RD48F3000P0ZBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F3000P0ZBQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F3000P0ZBQEA	MICRON	获取价格	64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash
RD48F3000P0ZTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F3000P0ZTQ0	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
RD48F3000P0ZTQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F3000P0ZTQEA	MICRON	获取价格	64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash